inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 4N35 description drain current i d = 4a@ t c =25 drain source voltage- : v dss = 350v(min) fast switching speed applications general purpose power amplifier absolute maximum ratings(t c =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 350 v v gs gate-source voltage 30 v i d drain current-continuous@ t c =25 4 a i d(puls) pulse drain current 16 a p tot total dissipation@t c =25 75 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 3 /w r th j-a thermal resistance, junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 4N35 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 250 a 350 v v gs (th ) gate threshold voltage v ds = v gs ; i d =1ma 2.0 4.0 v v sd diode forward on-voltage i s =4a ;v gs = 0 1.4 v r ds( on ) drain-source on-resistance v gs = 10v; i d =2a 2.0 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 350v; v gs = 0 10 a pdf pdffactory pro www.fineprint.cn
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